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ST 2SC4375U
NPN Silicon Epitaxial Planar Transistor
High current application
Absolute Maximum Ratings (Ta = 25 OC) Parameter
Collector Base Voltage Collector Emitter Voltage Emitter Base Voltage Collector Current Total Power Dissipation Junction Temperature Storage Temperature Range
1) 2
Symbol VCBO VCEO VEBO IC Ptot TJ TS
Value 30 30 5 1.5 0.5 11) 150 - 55 to + 150
Unit V V V A W
O
C C
O
When mounted on a 250 mm X 0.8 t ceramic substrate.
Characteristics at Ta = 25 OC
Parameter DC Current Gain at VCE = 2 V, IC = 500 mA Current Gain Group O Y Symbol hFE hFE V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO VCE(sat) VBE fT Cob Min. 100 160 30 30 5 Typ. 120 Max. 200 320 100 100 2 1 40 Unit V V V nA nA V V MHz pF
Collector Base Breakdown Voltage at IC = 1 mA Collector Emitter Breakdown Voltage at IC = 10 mA Emitter Base Breakdown Voltage at IE = 1 mA Collector Cutoff Current
at VCB = 30 V
Emitter Cutoff Current at VEB = 5 V Collector Emitter Saturation Voltage at IC = 1.5 A, IB = 30 mA Base Emitter Voltage at VCE = 2 V, IC = 500 mA Transition Frequency at VCE = 2 V, IC = 500 mA Collector Output Capacitance at VCB = 10 V, f = 1 MHz
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724)
(R)
Dated : 17/04/2007
ST 2SC4375U
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724)
(R)
Dated : 17/04/2007
ST 2SC4375U
SOT-89 PACKAGE OUTLINE
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724)
(R)
Dated : 17/04/2007

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